Plasma Enhanced Chemical Vapor Deposition (PECVD) System

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a versatile thin-film deposition technique that enables low-temperature growth of high-quality dielectric, semiconductor, and polymer films using RF plasma activation. By generating reactive species through plasma, PECVD allows excellent film uniformity, high deposition rates, and superior film properties at substrate temperatures significantly lower than conventional CVD processes.

Advanced Process Technology Pvt. Ltd. designs and manufactures turnkey PECVD systems suitable for R&D, pilot production, and industrial applications, with complete integration of process chamber, vacuum system, gas delivery, plasma generation, and automation.

Key Features

• RF plasma excitation at 13.56 MHz
• Parallel-plate or showerhead electrode configurations
• Low-temperature processing (100 – 400 °C)
• Multi-channel mass flow controlled gas delivery
• Uniform plasma distribution for high film quality
• Real-time process parameter monitoring and control
• PLC + HMI based automated system control
• Modular and upgradeable system architecture

Turnkey Project Scope

Advanced Process Technology Pvt. Ltd. offers complete turnkey PECVD solutions, including:

• Process chamber and RF plasma system
• High-vacuum pumping system
• Gas distribution system (GDS)
• Gas manifolds with safety interlocks
• Leak-proof gas connections and certified tubing layout
• Mass Flow Controllers (MFCs) for precise gas control
• Electrical, control, and software integration
• Installation, commissioning, and process support

Applications

• Silicon Nitride (SiNx)
• Silicon Dioxide (SiO₂)
• Amorphous Silicon (a-Si)
• Diamond-Like Carbon (DLC)
• Passivation layers
• Barrier and protective coatings

Typical System Performance 

• Base Vacuum: ~ 10⁻⁶ Torr
• RF Power: Up to 500 W
• Deposition Rate: 10 – 1000 Å/min
• Excellent film uniformity and repeatability

Technical Specifications