Cylindrical Magnetron Sputtering System
Advanced Process Technology Pvt. Ltd. has successfully developed and commercialized India’s first Cylindrical Magnetron Source for sputtering applications. This advanced sputtering solution enables high-quality thin film deposition on internal cylindrical surfaces and also supports large-area deposition up to 2 meters.
Overview
The Cylindrical Magnetron Sputtering System is engineered to deposit uniform and high-density thin films on internal surfaces of tubes, pipes, and hollow cylindrical components as well as large-area linear substrates up to 2000 mm length.
Key Highlights
- First indigenous Cylindrical Magnetron Sputtering System developed in India
- Enables coating of internal cylindrical geometries
- Supports large-area sputtering up to 2 meters
- Target utilization up to 85%
- Reduced material wastage and operating cost
Working Principle
The cylindrical magnetron geometry enables uniform plasma confinement around the full target circumference, leading to highly uniform target erosion. This results in a target utilization efficiency of up to 85%, significantly higher than conventional planar magnetrons, which typically achieve only 30–40%..
System Configuration
- Cylindrical Magnetron Cathode
- High-vacuum stainless steel chamber
- DC / Pulsed DC / RF power supply
- Mass Flow Controllers for process gases
- PLC/PC-based control system
Applications
- Internal coating of pipes and tubular components
- Wear-resistant and corrosion-resistant coatings
- Functional and barrier thin films
System Configuration
Cylindrical Magnetron Cathode
- Custom-designed cylindrical target geometry
- Optimized magnetic field for uniform erosion
- Suitable for metallic, alloy, and compound targets
- Excellent thermal management for high-power operation
Vacuum Chamber
- High-vacuum stainless steel chamber
- Configurable for cylindrical parts or large-area substrates
- Turbo-molecular pump with dry or rotary backing pump
Power Supply Options
- DC for conductive targets
- Pulsed DC for arc-sensitive processes
- RF for dielectric materials
Gas Handling System
- Mass Flow Controllers (MFCs) for Argon and reactive gases
- Support for reactive sputtering with O₂, N₂, etc.
Substrate Handling
- Fixed or rotating substrate configurations
- Custom fixtures for tubes, pipes, and hollow components
- Optional heating or biasing
Control & Automation
- PLC or PC-based control system
- Real-time monitoring of pressure, power, gas flow, and deposition parameters
- Recipe-based process control
| Parameter | Specification |
| Target Type | Cylindrical Magnetron |
| Target Utilization | 70 – 85% (typical) |
| Erosion Uniformity | ±5% over active target length |
| Coating Geometry | Internal cylindrical & large-area linear |
| Maximum Coating Length | Up to 2000 mm |
| Power Capacity | Up to 10 kW (configurable) |
| Operating Pressure | 1 × 10⁻³ to 1 × 10⁻² mbar |
| Base Pressure | ≤ 5 × 10⁻⁶ mbar |
| Deposition Modes | DC / Pulsed DC / RF |
| Target Materials | Metals, alloys, compounds |
| Process Gases | Ar, O₂, N₂ |
